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| AUIRF2805 hexfet ? power mosfet www.irf.com 1 pd - 97690a s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. g d s gate drain source to-220ab AUIRF2805 s d g d automotive grade hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features ! " # "! ! $ % " & '# ! (! )* description !" # $ % & ' ' # !" ( ) ' & parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, vgs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 0.45 r ? cs case-to-sink, flat, greased surface 0.50 ??? c/w r ? ja junction-to-ambient ??? 62 max. 175 120 700 75 450 see fig. 12a, 12b, 15, 16 -55 to + 175 300 10 lbf in (1.1n m) 330 2.2 20 1220 v (br)dss 55v r ds(on) typ. 3.9m ? max 4.7m ? 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 0.08mh r g = 25 ? , i as = 104a. (see figure 12). i sd ? 104a, di/dt ? 240a/ s, v dd ?? v (br)dss , t j ? 175c pulse width ? 400 s; duty cycle ? 2%. s d g c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population, starting t j = 25c, l = 0.08mh, r g = 25 ? , i as = 104a. r ?? is measured at static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? ? m ? a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 150 230 q gs gate-to-source charge ??? 38 57 nc q gd gate-to-drain ("miller") charge ??? 52 78 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 120 ??? t d(off) turn-off delay time ??? 68 ??? ns t f fall time ??? 110 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 5110 ??? c oss output capacitance ??? 1190 ??? pf c rss reverse transfer capacitance ??? 210 ??? c oss output capacitance ??? 6470 ??? c oss output capacitance ??? 860 ??? c oss eff. effective output capacitance ??? 1600 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 175 (body diode) a i sm pulsed source current ??? ??? 700 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 80 120 ns q rr reverse recovery charge ??? 290 430 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 25c, i f = 104a di/dt = 100a/ s t j = 25c, i s = 104a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 104a v gs = 0v, v ds = 44v, ? = 1.0mhz v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c mosfet symbol v dd = 28v i d = 104a r g = 2.5 ? conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 44v conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 104a i d = 104a v ds = 44v v gs = 20v v gs = -20v v gs = 10v www.irf.com 3 ! " #$%&%' ' ( ) )* ) qualification information ? to-220 n/a rohs compliant yes esd machine model class m4 (+/- >800v) ??? aec-q101-002 human body model class h3a (+/- 5000v) ??? aec-q101-001 charged device model class c5 (+/- >2000v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 4. 0 5.0 6. 0 7. 0 8. 0 9. 0 10. 0 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ? a ) t j = 25c t j = 175c v ds = 25v 20 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v fig 4. typical forward transconductance vs. drain current 0 40 80 120 160 200 i d, drain-to-source current (a) 0 40 80 120 160 200 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 25v 20 s pulse width www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 c , c a p a c i t a n c e ( p f ) cos s crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 240 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v i d = 104a a nce 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 30 60 90 120 150 180 t , case temperature ( c) i , drain current (a) c d limited by package fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 175a www.irf.com 7 25 50 75 100 125 150 175 0 200 400 600 800 1000 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 43a 87a 104a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - %&+ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1. 0e-07 1. 0e-06 1. 0e-05 1. 0e-04 1.0e-03 1. 0e-02 1. 0e-01 tav (sec) 1 10 100 1000 10000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bot tom 10% duty cycle i d = 104a www.irf.com 9 fig 17. ,-. * * / # for n-channel hexfet power mosfets ???? ? ???? ?? ?? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 0 0 + - + + + - - - ??? ??? ! "#"" ??? $ % % ??? "#""& # v ds 90% 10% v gs t d(on) t r t d(off) t f '( ???? ) $ ??????? + - fig 18a. switching time test circuit fig 18b. switching time waveforms 10 www.irf.com * + , , 1 2 ) 2 # . # 343 5545 -5- "4" *627 www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRF2805 to-220 tube 50 AUIRF2805 12 www.irf.com - ( . / 0 ' +./, ( & ' 1-2 ) 3 $ & '4 ./5 ( & ./ ' ./5 & $ $ ) ./ & ) ' $ & ./ ' & 0 ' ./ & # ( $ & / ./ ./ '( ' ' & / ' & ./ ' ' & . ' '4 & / ./ ' ' ./ ) ./ ' & ./ ' ' & ./ # ' ./ 4 & 6 ./ # 6 . / ' ' ) ' 4 # ./ & " ' * 7 +*7, - * * *7 $ ' & 6 ( ./ ' *7 % $ 6 5 ( ' $ & ./ ./ ' ./ ."3 89:;: $ ' ' 1-2& 6 ( % ./ ' ' $ & world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 |
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